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STPS3L40S
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 3A 40 V 150C 0.44 V
FEATURES AND BENEFITS
n n n
Negligible switching losses Low thermal resistance Low forward voltage drop
DESCRIPTION Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMC, this device is intended for use in DC/DC chargers.
SMC (JEDEC DO-214AB)
ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 120C = 0.5 tp = 10 ms Sinusoidal tp=2 s square F=1kHz Value 40 10 3 75 1 - 65 to + 175 150 10000 Unit V A A A A C C V/s
*:
dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a )
April 2000 - Ed: 1A
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STPS3L40S
THERMAL RESISTANCES Symbol Rth(j-l) Junction to leads Parameter Value 18 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : P = 0.30 x IF(AV) + 0.047 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current.
PF(av)(W) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0
= 0.05 = 0.1 = 0.2 = 0.5
Typ. 16
VR = VRRM IF = 3 A IF = 3 A IF = 6 A IF = 6 A 0.52 0.40
Max. 100 40 0.5 0.44 0.62 0.58
Unit A mA V
Fig. 2: Average forward current versus ambient temperature( = 0.5).
IF(av)(A) 3.5
Rth(j-a)=Rth(j-l)
3.0
=1
2.5 2.0 1.5
Rth(j-a)=75C/W
T
1.0 0.5
tp
T
IF(av) (A) 0.5 1.0 1.5 2.0 2.5
=tp/T
3.0
3.5
4.0
0.0
=tp/T
tp
Tamb(C) 50 75 100 125 150
0
25
Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values).
Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35m, recommended pad layout).
Zth(j-a)/Rth(j-a) 1.0 0.8
IM(A) 14 12 10
Ta=25C
8 6 4
IM
0.6 0.4
= 0.5
Ta=75C
= 0.2 = 0.1
Ta=125C
t
2 0 1E-3
0.2
Single pulse
=0.5
t(s) 1E-2 1E-1 1E+0
tp(s) 1E+0 1E+1 1E+2 1E+3
0.0 1E-1
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STPS3L40S
Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). Fig. 6: Junction capacitance versus reverse voltage applied (typical values).
IR(mA) 5E+1 1E+1 1E+0
Tj=125C Tj=100C
C(pF) 600
F=1MHz Tj=25C
100
1E-1
Tj=25C
1E-2 VR(V) 1E-3 0 5 10 15 20 25 30 35 40
VR(V) 10 1 2 5 10 20 40
Fig. 7: Forward voltage drop versus forward current (maximum values).
IFM(A) 50.00 10.00
Tj=125C (Typical values)
Fig. 8: Non repetitive surge peak forward current versus number of cycles.
IFSM(A) 80 70 60 50
F=50Hz Tj initial=25C
1.00
Tj=125C
40
Tj=25C
30 20 10 0
0.10 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Number of cycles 1 10 100 1000
0.01 0.0
Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m).
Rth(j-a) (C/W) 100 80 60 40 20 S(Cu) (cm) 0 0 1 2 3 4 5
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STPS3L40S
PACKAGE MECHANICAL DATA SMC
E1
DIMENSIONS REF.
D
Millimeters Min. 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60
Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063
E
A1
C L
A2
A1 A2 b c E E1 E2 D L
b
E2
FOOT PRINT (in millimeters)
3.3
2.0
Ordering type STPS3L40S
n
4.2
Marking S3L4
2.0
Package SMC Weight 0.24g Base qty 2500 Delivery mode Tape and reel
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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